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Power MOSFET TSOT-23

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    MPN DMN10H170SVT-13
    Mfr. Diodes Incorporated
    Oneyac # A-DMN10H170SVT-13
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TSOT-23

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    FET type N-Channel
    Pd power dissipation (Max) 1.2W(Ta)
    RdsOn(Max)@Id,Vgs 160mΩ@5A,10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 1167 pF @ 25 V
    Gate charge (Qg) at different Vgs (maximum value) 9.7 nC @ 10 V
    Package/Enclosure TSOT-23
    working temperature -55℃~150℃(TJ)
    Drain source voltage Vds 100V
    Continuous drain current Id 2.6A(Ta)
    driving voltage 4.5V,10V
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