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MOSFET TO-252-3

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    MPN DMTH6010SK3Q-13
    Mfr. Diodes Incorporated
    Oneyac # A-DMTH6010SK3Q-13
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-252-3

    Specifications FAQ

    Description Details Operation
    Product Category MOSFET
    FET type N-Channel
    Pd power dissipation (Max) 3.1W(Ta)
    RdsOn(Max)@Id,Vgs 8mΩ@20A,10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 2841 pF @ 30 V
    Gate charge (Qg) at different Vgs (maximum value) 38.1 nC @ 10 V
    Package/Enclosure TO-252-3
    working temperature -55℃~175℃(TJ)
    Drain source voltage Vds 60V
    Continuous drain current Id 16.3A(Ta),70A(Tc)
    driving voltage 10V
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