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MOSFET TO-252-3

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    MPN DMN10H170SK3-13
    Mfr. Diodes Incorporated
    Oneyac # A-DMN10H170SK3-13
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-252-3

    Specifications FAQ

    Description Details Operation
    Product Category MOSFET
    FET type N-Channel
    Pd power dissipation (Max) 42W(Tc)
    RdsOn(Max)@Id,Vgs 140mΩ@5A,10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 1167 pF @ 25 V
    Gate charge (Qg) at different Vgs (maximum value) 9.7 nC @ 10 V
    Package/Enclosure TO-252-3
    working temperature -55℃~150℃(TJ)
    Drain source voltage Vds 100V
    Continuous drain current Id 12A(Tc)
    driving voltage 4.5V,10V
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