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MOSFET PowerDI5060-8

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    MPN DMT6010LPS-13
    Mfr. Diodes Incorporated
    Oneyac # A-DMT6010LPS-13
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : PowerDI5060-8

    Specifications FAQ

    Description Details Operation
    Product Category MOSFET
    FET type N-Channel
    Pd power dissipation (Max) 2.2W(Ta),113W(Tc)
    RdsOn(Max)@Id,Vgs 8mΩ@20A,10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 2090 pF @ 30 V
    Gate charge (Qg) at different Vgs (maximum value) 41.3 nC @ 10 V
    Package/Enclosure PowerDI5060-8
    working temperature -55℃~150℃(TJ)
    Drain source voltage Vds 60V
    Continuous drain current Id 13.5A(Ta),80A(Tc)
    driving voltage 4.5V,10V
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