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MOSFET PowerDI5060-8

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    MPN DMT8012LPS-13
    Mfr. Diodes Incorporated
    Oneyac # A-DMT8012LPS-13
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : PowerDI5060-8

    Specifications FAQ

    Description Details Operation
    Product Category MOSFET
    FET type N-Channel
    Pd power dissipation (Max) 2.1W(Ta),113W(Tc)
    RdsOn(Max)@Id,Vgs 17mΩ@12A,10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 1949 pF @ 40 V
    Gate charge (Qg) at different Vgs (maximum value) 34 nC @ 10 V
    Package/Enclosure PowerDI5060-8
    working temperature -55℃~150℃(TJ)
    Drain source voltage Vds 80V
    Continuous drain current Id 9A(Ta),65A(Tc)
    driving voltage 4.5V,10V
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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