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    MPN DMN60H080DS-7
    Mfr. Diodes Incorporated
    Oneyac # A-DMN60H080DS-7
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category MOSFET
    FET type N-Channel
    Pd power dissipation (Max) 1.1W(Ta)
    RdsOn(Max)@Id,Vgs 100Ω@60mA,10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 25 pF @ 25 V
    Gate charge (Qg) at different Vgs (maximum value) 1.7 nC @ 10 V
    Encapsulation/shell SOT-23-3
    working temperature -55℃~150℃(TJ)
    Drain source voltage Vds 600V
    Continuous drain current Id 80mA(Ta)
    driving voltage 4.5V,10V
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