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Universal MOSFET N-Channel 660mW(Ta) ±8V U-DFN2020-6 (Class F) -55℃~150℃(TJ) 20V 7.9A(Ta)

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MPN DMN2022UFDF-7
Mfr. Diodes Incorporated
Oneyac # A-DMN2022UFDF-7
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description N-Channel 660mW(Ta) ±8V U-DFN2020-6 (Class F) -55℃~150℃(TJ) 20V 7.9A(Ta)

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Universal MOSFET
FET type N-Channel
Pd power dissipation (Max) 660mW(Ta)
RdsOn(Max)@Id,Vgs 22mΩ@4A,4.5V
Gate voltage Vgs ±8V
Input capacitance (Ciss) at different Vds (maximum value) 907 pF @ 10 V
Gate charge (Qg) at different Vgs (maximum value) 18 nC @ 8 V
Package/Enclosure U-DFN2020-6 (Class F)
working temperature -55℃~150℃(TJ)
Drain source voltage Vds 20V
Continuous drain current Id 7.9A(Ta)
driving voltage 1.5V,4.5V
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