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MOSFET X2-DFN1006-3

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    MPN DMN2501UFB4-7
    Mfr. Diodes Incorporated
    Oneyac # A-DMN2501UFB4-7
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : X2-DFN1006-3

    Specifications FAQ

    Description Details Operation
    Product Category MOSFET
    FET type N-Channel
    Pd power dissipation (Max) 500mW(Ta)
    RdsOn(Max)@Id,Vgs 400mΩ@600mA,4.5V
    Gate voltage Vgs ±8V
    Input capacitance (Ciss) at different Vds (maximum value) 82 pF @ 16 V
    Gate charge (Qg) at different Vgs (maximum value) 2 nC @ 10 V
    Package/Enclosure X2-DFN1006-3
    working temperature -55℃~150℃(TJ)
    Drain source voltage Vds 20V
    Continuous drain current Id 1A(Ta)
    driving voltage 1.8V,4.5V
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