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MOSFET 8-SO

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    MPN DMN4800LSSQ-13
    Mfr. Diodes Incorporated
    Oneyac # A-DMN4800LSSQ-13
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : 8-SO

    Specifications FAQ

    Description Details Operation
    Product Category MOSFET
    RdsOn(Max)@Id,Vgs 14mΩ@9A,10V
    Continuous Drain Current Id 8.6A(Ta)
    Package/Enclosure 8-SO
    Pd-power dissipation (Max) 1.46W(Ta)
    Input capacitance (Ciss) (maximum) at different Vds 798 pF @ 10 V
    Drain-source voltage Vds 30V
    Gate charge at different VGS (QG) (max.) 8.7 nC @ 5 V
    fet type N-Channel
    Operating temperature -55℃~150℃(TJ)
    Gate voltage Vgs ±25V
    Driving voltage 4.5V,10V
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