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MOSFET PowerDI3333-8

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    MPN DMP2010UFG-7
    Mfr. Diodes Incorporated
    Oneyac # A-DMP2010UFG-7
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : PowerDI3333-8

    Specifications FAQ

    Description Details Operation
    Product Category MOSFET
    FET type P-Channel
    Pd power dissipation (Max) 900mW(Ta)
    RdsOn(Max)@Id,Vgs 9.5mΩ@3.6A,4.5V
    Gate voltage Vgs ±10V
    Input capacitance (Ciss) at different Vds (maximum value) 3350 pF @ 10 V
    Gate charge (Qg) at different Vgs (maximum value) 103 nC @ 10 V
    Package/Enclosure PowerDI3333-8
    working temperature -55℃~150℃(TJ)
    Drain source voltage Vds 20V
    Continuous drain current Id 12.7A(Ta),42A(Tc)
    driving voltage 2.5V,4.5V
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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