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General Purpose Transistors TO-252-3

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    MPN 2DB1182Q-13
    Mfr. Diodes Incorporated
    Oneyac # A-2DB1182Q-13
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-252-3

    Specifications FAQ

    Description Details Operation
    Product Category General Purpose Transistors
    Collector emitter saturation voltage 800mV
    DC current gain hFE 120
    Package/Enclosure TO-252-3
    Power dissipation Pd 10W
    working temperature -55℃~150℃(TJ)
    Type of transistor PNP
    Maximum collector emitter voltage VCEO 32V
    Collector continuous current 2A
    Characteristic frequency fT 110MHz
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