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Power MOSFET SPP11N80C3 TO-220-3

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    MPN SPP11N80C3XKSA1
    Other # SPP11N80C3
    Mfr. Infineon
    Oneyac # A-SPP11N80C3XKSA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-220-3 Operating temperature : -55°C ~ 150°C(TJ)

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Power dissipation (maximum) 156W(Tc)
    Drain-Source Voltage (Vdss) 800V
    fet type n channel
    Vgs(Max) ±20V
    On resistance at different Id and Vgs (maximum) 450 milliohm @ 7.1A, 10V
    Package/Enclosure TO-220-3
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    Operating temperature -55°C ~ 150°C(TJ)
    Input capacitance (Ciss) (maximum) at different Vds 1600pF @ 100V
    technology MOSFET (metal oxide)
    Current at 25°C-Continuous Drain (Id) 11A(Tc)
    Vgs(th) (maximum) when different Id 3.9V @ 680uA
    Gate charge at different VGS (QG) (maximum) 85nC @ 10V
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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    Qty. Unit Price
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