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Power MOSFET PG-TO247

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    MPN IPW90R120C3XKSA1
    Mfr. Infineon
    Oneyac # A-IPW90R120C3XKSA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : PG-TO247

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 36A(Tc)
    FET type N-Channel
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 120 milliohms @ 26A, 10V
    Vgs (th) (maximum value) for different IDs 3.5V @ 2.9mA
    Input capacitance (Ciss) at different Vds (maximum value) 6800nF @ 100V
    Gate charge (Qg) at different Vgs (maximum value) 270nC @ 10V
    Power dissipation (maximum value) 417W(Tc)
    Package/Enclosure PG-TO247
    working temperature -55°C ~ 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 900V
    Drive voltage (maximum RdsOn, minimum RdsOn) 10V
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