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Power Mosfet IPW60R041P6 TO-247-3

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    MPN IPW60R041P6FKSA1
    Other # IPW60R041P6
    Mfr. Infineon
    Oneyac # A-IPW60R041P6FKSA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-247-3

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Power dissipation (maximum) 481W(Tc)
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    Gate charge at different VGS (QG) (maximum) 170nC @ 10V
    fet type n channel
    Drain-Source Voltage (Vdss) 600V
    technology MOSFET (metal oxide)
    Package/Enclosure TO-247-3
    Input capacitance (Ciss) (maximum) at different Vds 8180pF @ 100V
    Operating temperature -55°C ~ 150°C(TJ)
    Current at 25°C-Continuous Drain (Id) 77.5A(Tc)
    On resistance at different Id and Vgs (maximum) 41 milliohm @ 35.5a, 10V
    Vgs(th) (maximum) when different Id 4.5V @ 2.96mA
    Vgs(Max) ±20V
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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