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Power MOSFET IPP65R310CFDA TO-220-3

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    MPN IPP65R310CFDAAKSA1
    Other # IPP65R310CFDA
    Mfr. Infineon
    Oneyac # A-IPP65R310CFDAAKSA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220-3 Operating temperature : -40°C ~ 150°C(TJ)

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    On resistance at different Id and Vgs (maximum) 310 milliohm @ 4.4a, 10V
    Power dissipation (maximum) 104.2W(Tc)
    Gate charge at different VGS (QG) (maximum) 41nC @ 10V
    Vgs(Max) ±20V
    fet type n channel
    technology MOSFET (metal oxide)
    Package/Enclosure TO-220-3
    Vgs(th) (maximum) when different Id 4.5V @ 440uA
    Drain-Source Voltage (Vdss) 650V
    Current at 25°C-Continuous Drain (Id) 11.4A(Tc)
    Operating temperature -40°C ~ 150°C(TJ)
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    Input capacitance (Ciss) (maximum) at different Vds 1110pF @ 100V
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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