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Power Mosfet IPP60R190P6 TO-220-3

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    MPN IPP60R190P6XKSA1
    Other # IPP60R190P6
    Mfr. Infineon
    Oneyac # A-IPP60R190P6XKSA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-220-3

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Vgs(th) (maximum) when different Id 4.5V @ 630u
    Vgs(Max) ±20V
    On resistance at different Id and Vgs (maximum) 190 milliohm @ 7.6a, 10V
    Input capacitance (Ciss) (maximum) at different Vds 1750pF @ 100V
    fet type n channel
    Gate charge at different VGS (QG) (maximum) 11nC @ 10V
    Drain-Source Voltage (Vdss) 600V
    Current at 25°C-Continuous Drain (Id) 20.2A(Tc)
    Power dissipation (maximum) 151W(Tc)
    Operating temperature -55°C ~ 150°C(TJ)
    Package/Enclosure TO-220-3
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    technology MOSFET (metal oxide)
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    A : Please rest assured that the products sold in the Oneyac mall are all original and genuine products. We are the authorized dealer of electronic components of well-known brands both at home and abroad, and we guarantee the quality from the source.

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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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    A : Please carefully check the product model information before placing the order. If the order is wrongly ordered due to your own reasons, we will not accept the return or replacement requirements.If the product quantity is wrong, the model is inconsistent, and the product quality problem occurs, please be sure to keep the original packaging and label, and contact us within two weeks to apply for return.

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    MPQ 50 ETD HK Contact Us
    Min. 1 Mult. 1

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