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Power Mosfet IPP114N12N3 G TO-220-3

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    MPN IPP114N12N3GXKSA1
    Other # IPP114N12N3 G
    Mfr. Infineon
    Oneyac # A-IPP114N12N3GXKSA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-220-3

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    technology MOSFET (metal oxide)
    Vgs(th) (maximum) when different Id 4V @ 83uA
    Operating temperature -55°C ~ 175°C(TJ)
    Gate charge at different VGS (QG) (maximum) 65nC @ 10V
    Drain-Source Voltage (Vdss) 120V
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    Power dissipation (maximum) 136W(Tc)
    Package/Enclosure TO-220-3
    fet type n channel
    On resistance at different Id and Vgs (maximum) 11.4 milliohm @ 75A, 10V
    Vgs(Max) ±20V
    Input capacitance (Ciss) (maximum) at different Vds 4310pF @ 60V
    Current at 25°C-Continuous Drain (Id) 75A(Tc)
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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