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Power Mosfet IPP040N06N3 G TO-220-3

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    MPN IPP040N06N3GXKSA1
    Other # IPP040N06N3 G
    Mfr. Infineon
    Oneyac # A-IPP040N06N3GXKSA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-220-3

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    Drain-Source Voltage (Vdss) 60V
    technology MOSFET (metal oxide)
    Current at 25°C-Continuous Drain (Id) 90A(Tc)
    Operating temperature -55°C ~ 175°C(TJ)
    On resistance at different Id and Vgs (maximum) 4 milliohm @ 90a, 10V
    Input capacitance (Ciss) (maximum) at different Vds 11000pF @ 30V
    Vgs(Max) ±20V
    Vgs(th) (maximum) when different Id 4V @ 90uA
    Gate charge at different VGS (QG) (maximum) 98nC @ 10V
    Power dissipation (maximum) 188W(Tc)
    fet type n channel
    Package/Enclosure TO-220-3
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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