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Power Mosfet IPP030N10N3 G TO-220-3

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    MPN IPP030N10N3GXKSA1
    Other # IPP030N10N3 G
    Mfr. Infineon
    Oneyac # A-IPP030N10N3GXKSA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-220-3

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Drive voltage (Max RdsOn, Minimum RdsOn) 6V,10V
    Gate charge at different VGS (QG) (maximum) 206nC @ 10V
    Current at 25°C-Continuous Drain (Id) 100A(Tc)
    Power dissipation (maximum) 300W(Tc)
    Vgs(Max) ±20V
    Input capacitance (Ciss) (maximum) at different Vds 14800pF @ 50V
    Package/Enclosure TO-220-3
    Vgs(th) (maximum) when different Id 3.5V @ 275uA
    On resistance at different Id and Vgs (maximum) 3 milliohm @ 100A, 10V
    Drain-Source Voltage (Vdss) 100V
    Operating temperature -55°C ~ 175°C(TJ)
    technology MOSFET (metal oxide)
    fet type n channel
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