Datasheet |
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Description | Details | Operation |
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Product Category | Power MOSFET | |
Current at 25 ° C - Continuous Drain (Id) | 80A(Tc) | |
FET type | N channels | |
Vgs (maximum value) | ±20V | |
On resistance at different Id and Vgs (maximum value) | 8.6 milliohms @ 73A, 10V | |
Vgs (th) (maximum value) for different IDs | 3.5V @ 75uA | |
Input capacitance (Ciss) at different Vds (maximum value) | 3980pF @ 50V | |
Gate charge (Qg) at different Vgs (maximum value) | 55nC @ 10V | |
Power dissipation (maximum value) | 125W(Tc) | |
Package/Enclosure | TO-262-3, long lead, I ² Pak, TO-262AA | |
working temperature | -55°C ~ 175°C(TJ) | |
technology | MOSFET (Metal Oxide) | |
Leakage source voltage (Vdss) | 100V | |
Drive voltage (maximum RdsOn, minimum RdsOn) | 6V,10V |
A : Please rest assured that the products sold in the Oneyac mall are all original and genuine products. We are the authorized dealer of electronic components of well-known brands both at home and abroad, and we guarantee the quality from the source.
A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.
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Qty. | Unit Price | Ext. Price |
---|---|---|
1+ : Inquiry |
MPQ | 50 | ETD HK | Contact Us |
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Min. | 1 | Mult. | 1 |
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