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Power MOSFET IPG20N10S4L-35 8-PowerVDFN

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    MPN IPG20N10S4L35ATMA1
    Other # IPG20N10S4L-35
    Mfr. Infineon
    Oneyac # A-IPG20N10S4L35ATMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : 8-PowerVDFN

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 20A
    FET function Logic level gate
    FET type 2 N-channels (dual)
    On resistance at different Id and Vgs (maximum value) 35 milliohms @ 17A, 10V
    Vgs (th) (maximum value) for different IDs 2.1V @ 16uA
    Input capacitance (Ciss) at different Vds (maximum value) 1105pF @ 25V
    Gate charge (Qg) at different Vgs (maximum value) 17.4nC @ 10V
    Power - maximum value 43W
    Package/Enclosure 8-PowerVDFN
    working temperature -55°C ~ 175°C(TJ)
    Leakage source voltage (Vdss) 100V
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    A : Please rest assured that the products sold in the Oneyac mall are all original and genuine products. We are the authorized dealer of electronic components of well-known brands both at home and abroad, and we guarantee the quality from the source.

    Q : Can you provide the original factory agent qualification certificate?

    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

    Q : Can I return it?

    A : Please carefully check the product model information before placing the order. If the order is wrongly ordered due to your own reasons, we will not accept the return or replacement requirements.If the product quantity is wrong, the model is inconsistent, and the product quality problem occurs, please be sure to keep the original packaging and label, and contact us within two weeks to apply for return.

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