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Power Mosfet IPD90N04S3-H4 TO-252-3, DPak (2-lead + tab), SC-63

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    MPN IPD90N04S3H4ATMA1
    Other # IPD90N04S3-H4
    Mfr. Infineon
    Oneyac # A-IPD90N04S3H4ATMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-252-3, DPak (2-lead + tab), SC-63

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Operating temperature -55°C ~ 175°C(TJ)
    fet type n channel
    Gate charge at different VGS (QG) (maximum) 60nC @ 10V
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    Package/Enclosure TO-252-3, DPak (2-lead + tab), SC-63
    Input capacitance (Ciss) (maximum) at different Vds 3900pF @ 25V
    Current at 25°C-Continuous Drain (Id) 90A(Tc)
    Vgs(Max) ±20V
    On resistance at different Id and Vgs (maximum) 4.3 milliohm @ 90a, 10V
    technology MOSFET (metal oxide)
    Vgs(th) (maximum) when different Id 4V @ 65uA
    Power dissipation (maximum) 115W(Tc)
    Drain-Source Voltage (Vdss) 40V
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