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Power MOSFET IPD80R2K8CE TO-252-3, DPak (2 leads+tab), SC-63

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    MPN IPD80R2K8CEATMA1
    Other # IPD80R2K8CE
    Mfr. Infineon
    Oneyac # A-IPD80R2K8CEATMA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-252-3, DPak (2 leads+tab), SC-63

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 1.9A(Tc)
    FET type N channels
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 2.8 ohms @ 1.1A, 10V
    Vgs (th) (maximum value) for different IDs 3.9V @ 120uA
    Input capacitance (Ciss) at different Vds (maximum value) 290pF @ 100V
    Gate charge (Qg) at different Vgs (maximum value) 12nC @ 10V
    Power dissipation (maximum value) 42W(Tc)
    Package/Enclosure TO-252-3, DPak (2 leads+tab), SC-63
    working temperature -55°C ~ 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 800V
    Drive voltage (maximum RdsOn, minimum RdsOn) 10V
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