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Power Mosfet IPD70R1K4P7S TO-252-3, DPak (2-lead + tab), SC-63

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    MPN IPD70R1K4P7SAUMA1
    Other # IPD70R1K4P7S
    Mfr. Infineon
    Oneyac # A-IPD70R1K4P7SAUMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-252-3, DPak (2-lead + tab), SC-63

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Gate charge at different VGS (QG) (maximum) 4.7nC @ 10V
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    Operating temperature -40°C ~ 150°C(TJ)
    Package/Enclosure TO-252-3, DPak (2-lead + tab), SC-63
    technology MOSFET (metal oxide)
    On resistance at different Id and Vgs (maximum) 1.4 ohm @ 700mA, 10V
    Input capacitance (Ciss) (maximum) at different Vds 158pF @ 400V
    Current at 25°C-Continuous Drain (Id) 4A(Tc)
    Power dissipation (maximum) 23W(Tc)
    Drain-Source Voltage (Vdss) 700V
    fet type n channel
    Vgs(Max) ±16V
    Vgs(th) (maximum) when different Id 3.5V @ 40uA
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