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Power Mosfet IPD65R650CE TO-252-3, DPak (2-lead + tab), SC-63

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    MPN IPD65R650CEAUMA1
    Other # IPD65R650CE
    Mfr. Infineon
    Oneyac # A-IPD65R650CEAUMA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-252-3, DPak (2-lead + tab), SC-63

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    On resistance at different Id and Vgs (maximum) 650 milliohm @ 2.1a, 10V
    fet type n channel
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    Operating temperature -40°C ~ 150°C(TJ)
    Vgs(Max) ±20V
    Drain-Source Voltage (Vdss) 650V
    Package/Enclosure TO-252-3, DPak (2-lead + tab), SC-63
    Gate charge at different VGS (QG) (maximum) 23nC @ 10V
    Current at 25°C-Continuous Drain (Id) 7A(Tc)
    Power dissipation (maximum) 86W(Tc)
    Input capacitance (Ciss) (maximum) at different Vds 440pF @ 100V
    Vgs(th) (maximum) when different Id 3.5V @ 210uA
    technology MOSFET (metal oxide)
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