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Power MOSFET IPD60R1K4C6 TO-252-3, DPak (2-lead + tab), SC-63

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    MPN IPD60R1K4C6ATMA1
    Other # IPD60R1K4C6
    Mfr. Infineon
    Oneyac # A-IPD60R1K4C6ATMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-252-3, DPak (2-lead + tab), SC-63 Operating temperature : -55°C ~ 150°C(TJ)

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25°C-Continuous Drain (Id) 3.2A(Tc)
    Drain-Source Voltage (Vdss) 600V
    Gate charge at different VGS (QG) (maximum) 9.4nC @ 10V
    Operating temperature -55°C ~ 150°C(TJ)
    fet type n channel
    On resistance at different Id and Vgs (maximum) 1.4 ohms @ 1.1a, 10V
    Vgs(Max) ±20V
    Package/Enclosure TO-252-3, DPak (2-lead + tab), SC-63
    Power dissipation (maximum) 28.4W(Tc)
    technology MOSFET (metal oxide)
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    Vgs(th) (maximum) when different Id 3.5V @ 90uA
    Input capacitance (Ciss) (maximum) at different Vds 200pF @ 100V
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