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Power MOSFET N channels TO-252-3, DPak (2 leads+tab), SC-63 -55°C ~ 175°C(TJ)

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MPN IPD50N03S207ATMA1
Other # IPD50N03S2-07
Mfr. Infineon
Oneyac # A-IPD50N03S207ATMA1
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description N channels TO-252-3, DPak (2 leads+tab), SC-63 -55°C ~ 175°C(TJ)

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFET
Current at 25 ° C - Continuous Drain (Id) 50A(Tc)
FET type N channels
Vgs (maximum value) ±20V
On resistance at different Id and Vgs (maximum value) 7.3 milliohms @ 50A, 10V
Vgs (th) (maximum value) for different IDs 4V @ 85uA
Input capacitance (Ciss) at different Vds (maximum value) 2000pF @ 25V
Gate charge (Qg) at different Vgs (maximum value) 68nC @ 10V
Power dissipation (maximum value) 136W(Tc)
Package/Enclosure TO-252-3, DPak (2 leads+tab), SC-63
working temperature -55°C ~ 175°C(TJ)
technology MOSFET (Metal Oxide)
Leakage source voltage (Vdss) 30V
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
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