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Power Mosfet IPD30N08S2L-21 TO-252-3, DPak (2-lead + tab), SC-63

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    MPN IPD30N08S2L21ATMA1
    Other # IPD30N08S2L-21
    Mfr. Infineon
    Oneyac # A-IPD30N08S2L21ATMA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-252-3, DPak (2-lead + tab), SC-63

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Drain-Source Voltage (Vdss) 75V
    Current at 25°C-Continuous Drain (Id) 30A(Tc)
    Vgs(Max) ±20V
    On resistance at different Id and Vgs (maximum) 20.5 milliohm @ 25A, 10V
    Vgs(th) (maximum) when different Id 2V @ 80uA
    Input capacitance (Ciss) (maximum) at different Vds 1650pF @ 25V
    Gate charge at different VGS (QG) (maximum) 72nC @ 10V
    Package/Enclosure TO-252-3, DPak (2-lead + tab), SC-63
    Power dissipation (maximum) 136W(Tc)
    Operating temperature -55°C ~ 175°C(TJ)
    fet type n channel
    Drive voltage (Max RdsOn, Minimum RdsOn) 4.5V,10V
    technology MOSFET (metal oxide)
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