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Power MOSFET IPC100N04S5L-2R6 8-PowerTDFN

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    MPN IPC100N04S5L2R6ATMA1
    Other # IPC100N04S5L-2R6
    Mfr. Infineon
    Oneyac # A-IPC100N04S5L2R6ATMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : 8-PowerTDFN Operating temperature : -55°C ~ 175°C(TJ)

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    On resistance at different Id and Vgs (maximum) 2.6 milliohm @ 50a, 10V
    Vgs(th) (maximum) when different Id 2V @ 30uA
    Package/Enclosure 8-PowerTDFN
    Power dissipation (maximum) 75W(Tc)
    technology MOSFET (metal oxide)
    Operating temperature -55°C ~ 175°C(TJ)
    fet type n channel
    Drive voltage (Max RdsOn, Minimum RdsOn) 4.5V,10V
    Vgs(Max) ±16V
    Input capacitance (Ciss) (maximum) at different Vds 2925pF @ 25V
    Drain-Source Voltage (Vdss) 40V
    Gate charge at different VGS (QG) (maximum) 55nC @ 10V
    Current at 25°C-Continuous Drain (Id) 100A(Tc)
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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