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Power MOSFET IPB80N06S4-07 TO-263-3, D ² Pak (2 leads+tab), TO-263AB

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    MPN IPB80N06S407ATMA2
    Other # IPB80N06S4-07
    Mfr. Infineon
    Oneyac # A-IPB80N06S407ATMA2
    Supplier Oneyac
    Unleaded/RoHs Lead Free/Rohs
    Description
    Package/Enclosure : TO-263-3, D ² Pak (2 leads+tab), TO-263AB

    Specifications FAQ

    Product Attribute Attribute Value Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 80A(Tc)
    FET type N channels
    Vgs (maximum value) ±20V
    Vgs (th) (maximum value) for different IDs 4V @ 40uA
    Input capacitance (Ciss) at different Vds (maximum value) 4500pF @ 25V
    Gate charge (Qg) at different Vgs (maximum value) 56nC @ 10V
    Power dissipation (maximum value) 79W(Tc)
    Package/Enclosure TO-263-3, D ² Pak (2 leads+tab), TO-263AB
    working temperature -55°C ~ 175°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 60V
    Drive voltage (maximum RdsOn, minimum RdsOn) 10V
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