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Power Mosfet IPB60R099CPA TO-263-3, D²Pak (2-lead + tab), TO-263AB

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    MPN IPB60R099CPAATMA1
    Other # IPB60R099CPA
    Mfr. Infineon
    Oneyac # A-IPB60R099CPAATMA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-263-3, D²Pak (2-lead + tab), TO-263AB Operating temperature : -40°C ~ 150°C(TJ)

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Vgs(Max) ±20V
    Vgs(th) (maximum) when different Id 3.5V @ 1.2mA
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    Input capacitance (Ciss) (maximum) at different Vds 2800pF @ 100V
    Power dissipation (maximum) 255W(Tc)
    Gate charge at different VGS (QG) (maximum) 80nC @ 10V
    Drain-Source Voltage (Vdss) 600V
    Current at 25°C-Continuous Drain (Id) 31A(Tc)
    On resistance at different Id and Vgs (maximum) 105 milliohms @ 18A, 10V
    Operating temperature -40°C ~ 150°C(TJ)
    fet type n channel
    Package/Enclosure TO-263-3, D²Pak (2-lead + tab), TO-263AB
    technology MOSFET (metal oxide)
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