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Power Mosfet IPB026N06N TO-263-3, D²Pak (2-lead + tab), TO-263AB

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    MPN IPB026N06NATMA1
    Other # IPB026N06N
    Mfr. Infineon
    Oneyac # A-IPB026N06NATMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-263-3, D²Pak (2-lead + tab), TO-263AB Operating temperature : -55°C ~ 175°C(TJ)

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Input capacitance (Ciss) (maximum) at different Vds 4100pF @ 30V
    On resistance at different Id and Vgs (maximum) 2.6 milliohm @ 100A, 10V
    Drive voltage (Max RdsOn, Minimum RdsOn) 6V,10V
    Gate charge at different VGS (QG) (maximum) 56nC @ 10V
    technology MOSFET (metal oxide)
    Vgs(Max) ±20V
    Current at 25°C-Continuous Drain (Id) 25A(Ta),100A(Tc)
    Drain-Source Voltage (Vdss) 60V
    Operating temperature -55°C ~ 175°C(TJ)
    Package/Enclosure TO-263-3, D²Pak (2-lead + tab), TO-263AB
    Power dissipation (maximum) 3W(Ta),136W(Tc)
    Vgs(th) (maximum) when different Id 2.8V @ 75uA
    fet type n channel
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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