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Power MOSFET IPA60R160P6 TO-220-3 whole package

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    MPN IPA60R160P6XKSA1
    Other # IPA60R160P6
    Mfr. Infineon
    Oneyac # A-IPA60R160P6XKSA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-220-3 whole package Operating temperature : -55°C ~ 150°C(TJ)

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Package/Enclosure TO-220-3 whole package
    Gate charge at different VGS (QG) (maximum) 44nC @ 10V
    Operating temperature -55°C ~ 150°C(TJ)
    On resistance at different Id and Vgs (maximum) 160 milliohm @ 9a, 10V
    Power dissipation (maximum) 34W(Tc)
    Vgs(Max) ±20V
    Vgs(th) (maximum) when different Id 4.5V @ 750uA
    Input capacitance (Ciss) (maximum) at different Vds 2080pF @ 100V
    technology MOSFET (metal oxide)
    Drain-Source Voltage (Vdss) 600V
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    Current at 25°C-Continuous Drain (Id) 23.8A(Tc)
    fet type n channel
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