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Power MOSFET TO-247-4

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    MPN IMZ120R030M1HXKSA1
    Mfr. Infineon
    Oneyac # A-IMZ120R030M1HXKSA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-247-4

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 56A(Tc)
    FET type N channels
    Vgs (maximum value) +23V,-7V
    On resistance at different Id and Vgs (maximum value) 40 milliohms @ 25A, 18V
    Vgs (th) (maximum value) for different IDs 5.7V @ 10mA
    Input capacitance (Ciss) at different Vds (maximum value) 2.12nF @ 800V
    Gate charge (Qg) at different Vgs (maximum value) 63nC @ 18V
    Power dissipation (maximum value) 227W(Tc)
    Package/Enclosure TO-247-4
    working temperature -55°C ~ 175°C(TJ)
    technology SiCFET (silicon carbide)
    Leakage source voltage (Vdss) 1.2kV
    Drive voltage (maximum RdsOn, minimum RdsOn) 15V,18V
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    A : Please rest assured that the products sold in the Oneyac mall are all original and genuine products. We are the authorized dealer of electronic components of well-known brands both at home and abroad, and we guarantee the quality from the source.

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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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    A : Please carefully check the product model information before placing the order. If the order is wrongly ordered due to your own reasons, we will not accept the return or replacement requirements.If the product quantity is wrong, the model is inconsistent, and the product quality problem occurs, please be sure to keep the original packaging and label, and contact us within two weeks to apply for return.

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