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IGBT transistor TO-252-3, DPak (2 leads+tab), SC-63 -40°C ~ 175°C(TJ)

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MPN IKD03N60RFATMA1
Other # IKD03N60RF
Mfr. Infineon
Oneyac # A-IKD03N60RFATMA1
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description IGBT TRENCH/FS 600V 6.5A TO252-3

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category IGBT transistor
Td (on/off) value at 25 ° C 10ns/128ns
IGBT type Trench type field cutoff
Vce (on) (maximum value) at different Vge and Ic 2.5V @ 15V,2.5A
Power - maximum value 53.6W
Reverse recovery time (trr) 31ns
Package/Enclosure TO-252-3, DPak (2 leads+tab), SC-63
working temperature -40°C ~ 175°C(TJ)
Switching energy 50uJ (on), 40uJ (off)
Gate charge 17.1nC
Test conditions 400V, 2.5A, 68 ohms, 15V
Voltage emitter breakdown (maximum value) 600V
Current collector (Ic) (maximum value) 6.5A
Current collector pulse (Icm) 7.5A
Input type standard
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