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Power Mosfet 8-PowerTDFN

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    MPN IAUC100N08S5N043ATMA1
    Mfr. Infineon
    Oneyac # A-IAUC100N08S5N043ATMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : 8-PowerTDFN

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Drain-Source Voltage (Vdss) 80V
    Vgs(Max) ±20V
    Power dissipation (maximum) 125W(Tc)
    Drive voltage (Max RdsOn, Minimum RdsOn) 6V,10V
    On resistance at different Id and Vgs (maximum) 4 milliohm @ 50a, 10V
    fet type n channel
    Vgs(th) (maximum) when different Id 3.8V @ 63uA
    Gate charge at different VGS (QG) (maximum) 56nC @ 10V
    technology MOSFET (metal oxide)
    Input capacitance (Ciss) (maximum) at different Vds 3860pF @ 40V
    Package/Enclosure 8-PowerTDFN
    Operating temperature -55°C ~ 175°C(TJ)
    Current at 25°C-Continuous Drain (Id) 100A(Tc)
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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    A : Please carefully check the product model information before placing the order. If the order is wrongly ordered due to your own reasons, we will not accept the return or replacement requirements.If the product quantity is wrong, the model is inconsistent, and the product quality problem occurs, please be sure to keep the original packaging and label, and contact us within two weeks to apply for return.

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