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Power MOSFET BSZ0500NSI 8-PowerTDFN

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    MPN BSZ0500NSIATMA1
    Other # BSZ0500NSI
    Mfr. Infineon
    Oneyac # A-BSZ0500NSIATMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : 8-PowerTDFN Operating temperature : -55°C ~ 150°C(TJ)

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs(th) (maximum) when different Id 2V @ 250uA
    Operating temperature -55°C ~ 150°C(TJ)
    Input capacitance (Ciss) (maximum) at different Vds 3400pF @ 15V
    Gate charge at different VGS (QG) (maximum) 52nC @ 10V
    Power dissipation (maximum) 2.1W(Ta),69W(Tc)
    Current at 25°C-Continuous Drain (Id) 30A(Ta),40A(Tc)
    Drain-Source Voltage (Vdss) 30V
    Package/Enclosure 8-PowerTDFN
    Vgs(Max) ±20V
    fet type n channel
    Drive voltage (Max RdsOn, Minimum RdsOn) 4.5V,10V
    technology MOSFET (metal oxide)
    On resistance at different Id and Vgs (maximum) 1.5 milliohm @ 20a, 10V
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