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Power Mosfet BSS119N H6327 TO-236-3,SC-59,SOT-23-3

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    MPN BSS119NH6327XTSA1
    Other # BSS119N H6327
    Mfr. Infineon
    Oneyac # A-BSS119NH6327XTSA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-236-3,SC-59,SOT-23-3 Operating temperature : -55°C ~ 150°C(TJ)

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Gate charge at different VGS (QG) (maximum) 0.6nC @ 10V
    Operating temperature -55°C ~ 150°C(TJ)
    Power dissipation (maximum) 500mW(Ta)
    On resistance at different Id and Vgs (maximum) 6 ohms @ 190ma, 10V
    Vgs(Max) ±20V
    Input capacitance (Ciss) (maximum) at different Vds 20.9pF @ 25V
    Package/Enclosure TO-236-3,SC-59,SOT-23-3
    fet type n channel
    technology MOSFET (metal oxide)
    Current at 25°C-Continuous Drain (Id) 190mA(Ta)
    Drain-Source Voltage (Vdss) 100V
    Vgs(th) (maximum) when different Id 2.3V @ 13uA
    Drive voltage (Max RdsOn, Minimum RdsOn) 4.5V,10V
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