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Power Mosfet BSO080P03S H 8-SOIC(0.154"",3.90mm width)

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    MPN BSO080P03SHXUMA1
    Other # BSO080P03S H
    Mfr. Infineon
    Oneyac # A-BSO080P03SHXUMA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : 8-SOIC(0.154"",3.90mm width)

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Drain-Source Voltage (Vdss) 30V
    technology MOSFET (metal oxide)
    Gate charge at different VGS (QG) (maximum) 136nC @ 10V
    Input capacitance (Ciss) (maximum) at different Vds 5890pF @ 25V
    fet type p channel
    Vgs(Max) ±25V
    Vgs(th) (maximum) when different Id 2.2V @ 250uA
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    Current at 25°C-Continuous Drain (Id) 12.6A(Ta)
    On resistance at different Id and Vgs (maximum) 8 milliohm @ 14.9a, 10V
    Package/Enclosure 8-SOIC(0.154"",3.90mm width)
    Operating temperature -55°C ~ 150°C(TJ)
    Power dissipation (maximum) 1.79W(Ta)
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