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Power Mosfet BSC22DN20NS3 G 8-PowerTDFN

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    MPN BSC22DN20NS3GATMA1
    Other # BSC22DN20NS3 G
    Mfr. Infineon
    Oneyac # A-BSC22DN20NS3GATMA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : 8-PowerTDFN

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Power dissipation (maximum) 34W(Tc)
    On resistance at different Id and Vgs (maximum) 225 milliohm @ 3.5A, 10V
    Gate charge at different VGS (QG) (maximum) 5.6nC @ 10V
    Drain-Source Voltage (Vdss) 200V
    Vgs(Max) ±20V
    Input capacitance (Ciss) (maximum) at different Vds 430pF @ 100V
    Current at 25°C-Continuous Drain (Id) 7A(Tc)
    Operating temperature -55°C ~ 150°C(TJ)
    Vgs(th) (maximum) when different Id 4V @ 13uA
    fet type n channel
    Package/Enclosure 8-PowerTDFN
    Drive voltage (Max RdsOn, Minimum RdsOn) 10V
    technology MOSFET (metal oxide)
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