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Power MOSFET BSC035N04LS G 8-PowerTDFN

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    MPN BSC035N04LSGATMA1
    Other # BSC035N04LS G
    Mfr. Infineon
    Oneyac # A-BSC035N04LSGATMA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : 8-PowerTDFN Operating temperature : -55°C ~ 150°C(TJ)

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    On resistance at different Id and Vgs (maximum) 3.5 milliohm @ 50a, 10V
    Vgs(th) (maximum) when different Id 2V @ 36uA
    Power dissipation (maximum) 2.5W(Ta),69W(Tc)
    Current at 25°C-Continuous Drain (Id) 21A(Ta),100A(Tc)
    Operating temperature -55°C ~ 150°C(TJ)
    Drain-Source Voltage (Vdss) 40V
    Gate charge at different VGS (QG) (maximum) 64nC @ 10V
    Drive voltage (Max RdsOn, Minimum RdsOn) 4.5V,10V
    fet type n channel
    Input capacitance (Ciss) (maximum) at different Vds 5100pF @ 20V
    Vgs(Max) ±20V
    Package/Enclosure 8-PowerTDFN
    technology MOSFET (metal oxide)
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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