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RF diode BAS 40 E6327 TO-236-3,SC-59,SOT-23-3

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    MPN BAS40E6327HTSA1
    Other # BAS 40 E6327
    Mfr. Infineon
    Oneyac # A-BAS40E6327HTSA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-236-3,SC-59,SOT-23-3

    Specifications FAQ

    Description Details Operation
    Product Category RF diode
    Voltage forward (Vf) at different If values 1V @ 40mA
    Current reverse leakage at different Vrs 1uA @ 30V
    Capacitance at different Vr and F values 5pF @ 0V,1MHz
    Type of diode Schottky barrier
    Reverse recovery time (trr) 100ps
    Package/Enclosure TO-236-3,SC-59,SOT-23-3
    Working temperature - structure -55°C ~ 150°C
    Voltage DC reverse (Vr) (maximum value) 40V
    Current average rectification (Io) 120mA(DC)
    speed Small signal=<200mA (Io), any speed
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