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RF diode BAS 3010S-02LRH E6327 SOD-882

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    MPN BAS3010S02LRHE6327XTSA1
    Other # BAS 3010S-02LRH E6327
    Mfr. Infineon
    Oneyac # A-BAS3010S02LRHE6327XTSA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : SOD-882

    Specifications FAQ

    Description Details Operation
    Product Category RF diode
    Voltage forward (Vf) at different If values 650mV @ 1A
    Current reverse leakage at different Vrs 300uA @ 30V
    Capacitance at different Vr and F values 15pF @ 5V,1MHz
    Type of diode Schottky barrier
    Package/Enclosure SOD-882
    Working temperature - structure -55°C ~ 150°C
    Voltage DC reverse (Vr) (maximum value) 30V
    Current average rectification (Io) 1A
    speed Quick recovery=<500ns,>200mA (Io)
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