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Universal MOSFET 8-SOIC

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    MPN SI4900DY-T1-GE3
    Mfr. Vishay
    Oneyac # A-SI4900DY-T1-GE3
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : 8-SOIC

    Specifications FAQ

    Description Details Operation
    Product Category Universal MOSFET
    Continuous drain current Id 5.3A
    FET type 2N-Channel
    Rds On(Max)@Id,Vgs 58 mOhms @ 4.3A,10V
    Vgs(th) 3V @ 250uA
    Pd power dissipation (Max) 3.1W
    Package/Enclosure 8-SOIC
    working temperature -55℃~150℃
    Drain source voltage Vds 60V
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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    A : Please carefully check the product model information before placing the order. If the order is wrongly ordered due to your own reasons, we will not accept the return or replacement requirements.If the product quantity is wrong, the model is inconsistent, and the product quality problem occurs, please be sure to keep the original packaging and label, and contact us within two weeks to apply for return.

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