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SiC MOSFET TO-247N

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MPN SCT3105KLHRC11
Mfr. ROHM Semiconductor
Authorized Distributor
Oneyac # A-SCT3105KLHRC11
Supplier Oneyac
Product Cycle

Production

Unleaded/RoHs Lead Free/Rohs
Description
Package/Enclosure : TO-247N

Specifications FAQ

Description Details Operation
Product Category SiC MOSFET
working temperature 175°C(TJ)
Drive voltage (maximum RdsOn, minimum RdsOn) 18V
technology SiCFET (silicon carbide)
FET type N channels
Leakage source voltage (Vdss) 1200V
Input capacitance (Ciss) at different Vds (maximum value) 574pF @ 800V
Package/Enclosure TO-247N
Current at 25 ° C - Continuous Drain (Id) 24A(Tc)
Vgs (th) (maximum value) for different IDs 5.6V @ 3.81mA
Power dissipation (maximum value) 134W
What is the gate charge at different Vgs? (Qg) (maximum value) 51nC @ 18V
Vgs (maximum value) +22V,-4V
On resistance at different Id and Vgs (maximum value) 137 milliohms @ 7.6A, 18V
Product Features Vehicle regulations
Find the similar products: 531

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