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Small signal MOSFET 6-PowerWFDFN

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    MPN RV5C040APTCR1
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A-RV5C040APTCR1
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : 6-PowerWFDFN

    Specifications FAQ

    Description Details Operation
    Product Category Small signal MOSFET
    Current at 25 ° C - Continuous Drain (Id) 4A(Ta)
    FET type P-Channel
    On resistance at different Id and Vgs (maximum value) 85 milliohms @ 4A, 4.5V
    Vgs (th) (maximum value) for different IDs 1V @ 1mA
    Input capacitance (Ciss) at different Vds (maximum value) 2000 pF @ 10 V
    Gate charge (Qg) at different Vgs (maximum value) 8.5 nC @ 4.5 V
    Power dissipation (maximum value) 700mW(Ta)
    Package/Enclosure 6-PowerWFDFN
    working temperature 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 20 V
    Drive voltage (maximum RdsOn, minimum RdsOn) 1.5V,4.5V
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