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Universal MOSFET TSMT3

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    MPN RSR030N06HZGTL
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A-RSR030N06HZGTL
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : TSMT3

    Specifications FAQ

    Description Details Operation
    Product Category Universal MOSFET
    working temperature 150°C(TJ)
    Drive voltage (maximum RdsOn, minimum RdsOn) 4V,10V
    technology MOSFET (Metal Oxide)
    FET type N channels
    Leakage source voltage (Vdss) 60V
    Input capacitance (Ciss) at different Vds (maximum value) 380pF @ 10V
    Package/Enclosure TSMT3
    Current at 25 ° C - Continuous Drain (Id) 3A(Ta)
    Vgs (th) (maximum value) for different IDs 2.5V @ 1mA
    Power dissipation (maximum value) 700mW(Ta)
    What is the gate charge at different Vgs? (Qg) (maximum value) 5nC @ 5V
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 85 milliohms @ 3A, 10V
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