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IGBT transistor 267 W TO-247-3 -40°C ~ 175°C(TJ)

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MPN RGS30TSX2GC11
Mfr. ROHM Semiconductor
Authorized Distributor
Oneyac # A-RGS30TSX2GC11
Supplier Oneyac
Product Cycle

Production

Unleaded/RoHs Lead Free/Rohs
Description 10US SHORT-CIRCUIT TOLERANCE, 12

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category IGBT transistor
Td (on/off) value at 25 ° C 30ns/70ns
IGBT type Trench type field cutoff
Vce (on) (maximum value) at different Vge and Ic 2.1V @ 15V,15A
Power Rating 267 W
Package/Enclosure TO-247-3
working temperature -40°C ~ 175°C(TJ)
Switching energy 740uJ (on), 600uJ (off)
Gate charge 41 nC
Test conditions 600V, 15A, 10 ohms, 15V
Voltage emitter breakdown (maximum value) 1200 V
Current collector (Ic) (maximum value) 30 A
Current collector pulse (Icm) 45 A
Input type standard
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