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Power MOSFET 6-PowerUDFN

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    MPN RF4G060ATTCR
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A-RF4G060ATTCR
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : 6-PowerUDFN

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 6A(Ta)
    FET type P-Channel
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 40 milliohms @ 6A, 10V
    Vgs (th) (maximum value) for different IDs 2.5V @ 1mA
    Input capacitance (Ciss) at different Vds (maximum value) 880 pF @ 20 V
    Gate charge (Qg) at different Vgs (maximum value) 17.2 nC @ 10 V
    Power dissipation (maximum value) 2W(Ta)
    Package/Enclosure 6-PowerUDFN
    working temperature 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 40 V
    Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
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