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Power Mosfet 6-PowerUDFN

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    MPN RF4G060ATTCR
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A-RF4G060ATTCR
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : 6-PowerUDFN

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Current at 25°C-Continuous Drain (Id) 6A(Ta)
    fet type P-Channel
    Vgs(Max) ±20V
    On resistance at different Id and Vgs (maximum) 40 milliohm @ 6a, 10V
    Vgs(th) (maximum) when different Id 2.5V @ 1mA
    Input capacitance (Ciss) (maximum) at different Vds 880 pF @ 20 V
    Gate charge at different VGS (QG) (maximum) 17.2 nC @ 10 V
    Power dissipation (maximum) 2W(Ta)
    Package/Enclosure 6-PowerUDFN
    Operating temperature 150°C(TJ)
    technology MOSFET (metal oxide)
    Drain-Source Voltage (Vdss) 40 V
    Drive voltage (Max RdsOn, Minimum RdsOn) 4.5V,10V
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