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Universal MOSFET TO-3

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    MPN R6520ENZC17
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A-R6520ENZC17
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-3

    Specifications FAQ

    Description Details Operation
    Product Category Universal MOSFET
    working temperature 150°C(TJ)
    Drive voltage (maximum RdsOn, minimum RdsOn) 10V
    technology MOSFET (Metal Oxide)
    FET type N channels
    Leakage source voltage (Vdss) 650V
    Input capacitance (Ciss) at different Vds (maximum value) 1.4nF @ 25V
    Package/Enclosure TO-3
    Current at 25 ° C - Continuous Drain (Id) 20A(Tc)
    Vgs (th) (maximum value) for different IDs 4V @ 630?A
    Power dissipation (maximum value) 68W(Tc)
    What is the gate charge at different Vgs? (Qg) (maximum value) 61nC @ 10V
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 205 milliohms @ 9.5A, 10V
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